Microsemi SiC high power radar devices win electronic design award - Compound Semiconductor

Microsemi SiC high power radar devices win electronic design award Compound Semiconductor, UK - Dec 11, 2008 The two RF power transistors, designated 0150SC-1250M and 0405SC-1000M, are the first parts in a breakthrough series of silicon carbide RF power transistors ... Microsemia s SiC RF power devices for VHF and UHF radar win award Semiconductor Today all 2 news articles